SiHFL210

www.vishay.com IRFL210, SiHFL210 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 8.2 1.8 4.5 Single D 1.5 FEATURES Surface mount Available in tape and reel Dynamic dV/dt rating Repetitive avalanche rated Fast switching Ease of paralleling Available Simple drive requirements Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SOT-223 D S D G Marking code: FC G S N-Channel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. SOT-223 SiHFL210-GE3 IRFL210PbF SiHFL210-E3 SOT-223 SiHFL210TR-GE3 a IRFL210TRPbF a SiHFL210T-E3 a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Dr...