IRFP17N50L, SiHFP17N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd ...
IRFP17N50L, SiHFP17N50L
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
130 33 59 Single
0.28
TO-247AC
D
G
S D G
ORDERING INFORMATION
Package
Lead (Pb)-free
S N-Channel
MOSFET
SnPb
FEATURES
SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications
Low Gate Charge Results in Simple Drive Requirement
Available
RoHS*
COMPLIANT
Enhanced dV/dt Capabilities Offer Improved Ruggedness
Higher Gate
Voltage Threshold Offers Improved Noise Immunity
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Zero
Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supply Motor Control applications
TO-247AC IRFP17N50LPbF SiHFP17N50L-E3 IRFP17N50L SiHFP17N50L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
VDS VGS
Continuous Drain Current
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T...