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SiHFSL9N60A Datasheet

Part Number SiHFSL9N60A
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet SiHFSL9N60A DatasheetSiHFSL9N60A Datasheet (PDF)

IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 49 13 20 Single I2PAK (TO-262) D 0.75 G S D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS Directive.

  SiHFSL9N60A   SiHFSL9N60A






Power MOSFET

IRFSL9N60A, SiHFSL9N60A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 600 VGS = 10 V 49 13 20 Single I2PAK (TO-262) D 0.75 G S D G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching • This Device is only for Through Hole Application APPLICABLE OFF LINE SMPS TOPOLOGIES • Active Clamped Forward • Main Switch ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free I2PAK (TO-262) SiHFSL9N60A-GE3 IRFSL9N60APbF SiHFSL9N60A-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C VGS at 10 V TC = 100 °C ID Pulsed Drain Currenta IDM Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction te.


2015-06-22 : 2SD858    D858    B763    74HC374A    54HC374A    MC54HC374A    SG8SC4M    MSC8154    MSC1211    IRFSL9N60A   


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