IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
49 13 20 Single
I2PAK (TO-262)
D
0.75
G
S D G
S N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Low Gate Charge Qg Results in Simple Drive
Requirement • Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
and Current • Compliant to RoHS Directive.
Power MOSFET
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
600 VGS = 10 V
49 13 20 Single
I2PAK (TO-262)
D
0.75
G
S D G
S N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Low Gate Charge Qg Results in Simple Drive
Requirement • Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage
and Current • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply • High Speed Power Switching • This Device is only for Through Hole Application
APPLICABLE OFF LINE SMPS TOPOLOGIES • Active Clamped Forward • Main Switch
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
I2PAK (TO-262) SiHFSL9N60A-GE3 IRFSL9N60APbF SiHFSL9N60A-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C VGS at 10 V
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction te.