www.vishay.com
IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
11 3.1 5.8 Single
0.20
DPAK (TO-252)
D
IPAK (TO-251)
D
GS
GD S
D
G S
N-Channel MOSFET
FEATURES • Dynamic dV/dt Rating • Surface Mount (IRFR014, SiHFR014) • Straight Lead (IRFU014, SiHFU014) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorizati.
Power MOSFET
www.vishay.com
IRFR014, IRFU014, SiHFR014, SiHFU014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
11 3.1 5.8 Single
0.20
DPAK (TO-252)
D
IPAK (TO-251)
D
GS
GD S
D
G S
N-Channel MOSFET
FEATURES • Dynamic dV/dt Rating • Surface Mount (IRFR014, SiHFR014) • Straight Lead (IRFU014, SiHFU014) • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252) SiHFR014-GE3 IRFR014PbF SiHFR014-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR014TRL-GE3 IRFR014TRLPbFa SiHFR014TL-E3a
DPAK (TO-252) SiHFR014TR-GE3 IRFR014TRPbFa SiHFR014T-E3a
IPAK (TO-251) SIHFU014-GE3 IRFU014PbF SiHFU014-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Conti.