www.vishay.com
IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (...
www.vishay.com
IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) ()
100 VGS = 10 V
Qg (Max.) (nC)
16
Qgs (nC) Qgd (nC)
4.4 7.7
Configuration
Single
0.27
D
DPAK (TO-252)
D
IPAK (TO-251)
D
G
S G
GD S
S N-Channel
MOSFET
FEATURES Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR120, SiHFR120) Straight Lead (IRFU120, SiHFU120) Available in Tape and Reel Fast Switching Ease of Paralleling Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
DESCRIPTION Third generation power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
DPAK (TO-252) SiHFR120-GE3 IRFR120PbF SiHFR120-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR120TR-GE3a IRFR120TRPbFa SiHFR120T-E3a
DPAK (TO-252) SiHFR120TRR-GE3a IRFR120TRRPbFa SiHFR120TR-E3a
DPAK (TO-252) SiHFR120TRL-GE3a IRFR120TRLPbFa SiHFR120TL-E3a
IPAK (TO-251) SiHFU120-GE3 IRFU120PbF SiHFU120-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwis...