IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(o...
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
www.vishay.com
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
- 100 VGS = - 10 V
18 3.0 9.0 Single
0.60
S
DPAK (TO-252)
D
IPAK (TO-251)
D
G
GS
GD S
D P-Channel
MOSFET
FEATURES
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR9120, SiHFR9120)
Straight Lead (IRFU9120, SiHFU9120)
Available in Tape and Reel
P-Channel
Fast Switching
Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free SiHFR9120-GE3
Lead (Pb)-free
IRFR9120PbF SiHFR9120-E3
Note a. See device orientation.
DPAK (TO-252) SiHFR9120TR-GE3a IRFR9120TRPbFa SiHFR9120T-E3a
DPAK (TO-252) SiHFR9120TRL-GE3a IRFR9120TRLPbFa SiHFR9120TL-E3a
IPAK (TO-251) SiHFU9120-GE3 IRFU9120PbF SiHFU9120-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage G...