Power MOSFET
IRFZ24, SiHFZ24
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Power
MOSFET
IRFZ24, SiHFZ24
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
25 5.8 11 Single
D
0.10
TO-220AB
G
S D G
S N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES Dynamic dV/dt Rating 175 °C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRFZ24PbF SiHFZ24-E3 IRFZ24 SiHFZ24
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
ID IDM
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation Peak Diode Recovery dV/dtc
TC = 25 °C
PD dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by ...