SiHG28N65EF

www.vishay.com SiHG28N65EF Vishay Siliconix E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 146 21 43 Single TO-247AC 0.102 D S D G G S N-Channel MOSFET FEATURES Fast body diode MOSFET using E series technology Reduced trr, Qrr, and IRRM Low figure-of-merit (FOM): Ron x Qg Low input capacitance (Ciss) Low switching losses due to reduced Qrr Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Telecommunications - Server and telecom power supplies Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs) Consumer and computing - ATX power supplies Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package Lead (Pb)-free and halogen-free TO-247AC SiHG28N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor Single pulse avalanche Energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltage slope Reverse di...