www.vishay.com
SiHG32N50D
Vishay Siliconix
D Series Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at ...
www.vishay.com
SiHG32N50D
Vishay Siliconix
D Series Power
MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) max. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
550 VGS = 10 V
96 18 29 Single
0.150
TO-247AC
D
S
D G
G
S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and Halogen-free
FEATURES Optimal Design
- Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-Of-Merit (FOM): Ron x Qg - Fast Switching Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS Consumer Electronics
- Displays (LCD or Plasma TV Server and Telecom Power Supplies
- SMPS Industrial
- Welding, Induction Heating, Motor Drives Battery Chargers
TO-247AC SiHG32N50D-E3 SiHG32N50D-GE3
ABSOLUTE MAXIM...
