SiHJ8N60E

www.vishay.com SiHJ8N60E Vishay Siliconix E Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. at 25 °C () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 44 5 10 Single 0.45 PowerPAK® SO-8L Single D G S N-Channel MOSFET FEATURES Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Switch mode power supplies (SMPS) Flyback converter Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting Consumer - Wall adaptors ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free PowerPAK SO-8L SiHJ8N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energy b EAS Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ, Tstg Drain-Source Voltage Slope Reverse Diode dV/dt d TJ = 125 °C dV/dt Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 2.5 A c. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C LIMIT 600 ± 30 8 5 18 0.71 88 ...