Power MOSFET
IRL520L, SiHL520L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Power
MOSFET
IRL520L, SiHL520L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5 V
12 3.0 7.1 Single
I2PAK (TO-262)
D
0.27
DS G
G
S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free
Lead (Pb)-free
FEATURES Halogen-free According to IEC 61249-2-21
Definition Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS (on) Specified at VGS = 4 V and 5 V 175°C Operating Temperature Compliant to RoHS Directive 2002/95/EC
DESCRIPTION Third generation Power
MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
I2PAK (TO-262) SiHL520L-GE3 IRL520LPbF SiHL520L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current
Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc
VGS at 5 V
TC = 25 °C TC = 100 °C
VDS VGS
ID
IDM
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating Junction and Storage Temperature ...