SiHL530

IRL530, SiHL530 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 28 3.8 14 Single D FEATURES 100 0.16 Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive R DS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature F ast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-220AB DESCRIPTION G G D S S N-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combi nation of fast swi tching, ruggedized device design, low on -resistance a nd cost effectiveness. The TO-220AB package is univers ally preferred for all commercial-industrial app lications at powe r dissipation levels to approximately 50 W. The low thermal resistance and low package c ost of th e TO- 220AB con tribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRL530PbF SiHL530-E3 IRL530 SiHL530 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER S Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque VGS at 5.0 V TC = 25 °...