SiJ438DP

www.vishay.com SiJ438DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () Max. 0.00135 at VGS = 10 V 0.00175 at VGS = 4.5 V ID (A) a, g 80 80 PowerPAK® SO-8L Single Qg (Typ.) 58 nC D 6.15 mm 1 5.13 mm 1 2S 3S 4S G Top View Bottom View Ordering Information:  SiJ438DP-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES TrenchFET® Gen IV power MOSFET Tuned for the lowest RDS-Qoss FOM 100 % Rg and UIS tested Qgd / Qgs ratio < 1 optimizes switching characteristics Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Synchronous rectification ORing High power density DC/DC VRMs and embedded DC/DC G DC/AC inverters Load switch N-Channel MOSFET D S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VGS ID IDM Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS IAS EAS PD TJ, Tstg Limit 40 +20, -16 80 g 80 g 45.3 b, c 36.2 b, c 200 63 4.5 b, c 50 125 69.4 44.4 5 b, c 3.2 b, c -55 to +150 260 Unit V A mJ W °C ...