www.vishay.com
SiJA54DP
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () Max. 0....
www.vishay.com
SiJA54DP
Vishay Siliconix
N-Channel 40 V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () Max. 0.00235 at VGS = 10 V 0.00320 at VGS = 4.5 V
ID (A) a, g 60 60
PowerPAK® SO-8L Single
Qg (Typ.) 32 nC
D
6.15 mm
1 5.13 mm
1 2S 3S 4S G
Top View
Bottom View
Ordering Information:
SiJA54DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES TrenchFET® Gen IV power
MOSFET
Tuned for the lowest RDS-Qoss FOM 100 % Rg and UIS tested Qgd / Qgs ratio < 1 optimizes switching
characteristics
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
Synchronous rectification
ORing
High power density DC/DC VRMs and embedded DC/DC
G
DC/AC inverters Load switch
N-Channel
MOSFET
D S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t =...
