SiR866DP

SiR866DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0019 at VGS = 10 V 0.00255 at VGS = 4.5 V ID (A)a 60g 60g Qg (Typ.) 35.3 nC FEATURES Halogen-free TrenchFET® Gen III Power MOSFET Low RDS(on) PWM (Qgd and Rg) Optimized 100 % Rg Tested 100 % UIS Tested RoHS COMPLIANT PowerPAK SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm Fixed Telecom Low-Side dc-to-dc OR-ing D G Bottom View Ordering Information: SiR866DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 ± 20 60g 60g 39b, c 31b, c 80 60g 4.9b, c 40 80 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit RthJA t ≤ 10 s 18 23 Maximum Junction-to-Ambientb, f °C/W RthJC 1.0 1.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Sold...