SiR880DP

New Product www.DataSheet4U.com SiR880DP Vishay Siliconix N-Channel 80 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(on) (Ω) 0.0059 at VGS = 10 V 0.0067 at VGS = 7.5 V 0.0085 at VGS = 4.5 V ID (A)a 60 60 60 23 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm Fixed Telecom POL DC/DC Converter Primary Side Switch D G Bottom View Ordering Information: SiR880DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 80 ± 20 60a 60a 23b, c 18.4b, c 100 60a 5.6b, c 35 61 104 66.6 6.25b, c 4.0b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM IS IAS EAS PD A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg °C THERMAL RESISTANCE RATINGS Parameter b, f Maximum Junction-to-Ambient °C/W RthJC Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface Mounted ...