www.vishay.com
SiRA24DP
Vishay Siliconix
N-Channel 25 V (D-S) MOSFET
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1 5...
www.vishay.com
SiRA24DP
Vishay Siliconix
N-Channel 25 V (D-S)
MOSFET
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1 5.15 mm
Top View
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration
1 2S 3S 4S G Bottom View
25 0.00140 0.00240
17.2 60 a, g Single
FEATURES TrenchFET® Gen IV power
MOSFET
Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss
100 % Rg and UIS tested Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS Synchronous rectification High power density DC/DC Synchronous buck converter Load switching
G
D
S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
PowerPAK SO-8 Single SiRA24DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source
voltage
Gate-source
voltage
TC = 25 °C
Continuous drain current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed drain current (t = 100 μs)
Continuous source-drain diode current
TC = 25 °C TA = 25 °C
Single pulse avalanche current Single pulse avalanche energy
L = 0.1 mH
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
LIMIT
25 +20 / -16
60 a 60 a 44.5 b, c 35.6 b, c 150 56.8 4.5 b, c 30 45 62.5 40 5 b, c 3.2 b, c -55 t...