www.vishay.com
SiRA54DP
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () (MAX.) 0.00235 at VGS = 10 V 0.00320 at VGS = 4.5 V
ID (A) a, g 60 60
Qg (TYP.) 32 nC
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
Ordering Information:
SiRA54DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® Gen IV power MOSFET
• 100 % Rg and UIS tested • Tuned for the lowest RDS-Qoss FOM • Qgd / Qgs ratio < 1 opt.
N-Channel MOSFET
www.vishay.com
SiRA54DP
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () (MAX.) 0.00235 at VGS = 10 V 0.00320 at VGS = 4.5 V
ID (A) a, g 60 60
Qg (TYP.) 32 nC
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
Ordering Information:
SiRA54DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES • TrenchFET® Gen IV power MOSFET
• 100 % Rg and UIS tested • Tuned for the lowest RDS-Qoss FOM • Qgd / Qgs ratio < 1 optimizes switching
characteristics
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Synchronous rectification • High power density DC/DC • VRMs and embedded DC/DC • DC/AC inverters • Load switch
G
D
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
LIMIT 40
+20, -16 60 g 60 g
32.2 b, c 25.7 b, c
150 33.3 4 b, c 30 45 36.7 23.5 4.4 b, c 2.8 b, c -55 to +150 260
UNIT V
A
mJ W °C
THERM.