www.vishay.com
SiRA58DP
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () (MAX.) ...
www.vishay.com
SiRA58DP
Vishay Siliconix
N-Channel 40 V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () (MAX.) 0.00265 at VGS = 10 V 0.00360 at VGS = 4.5 V
ID (A) a, g 60 60
Qg (TYP.) 23 nC
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
Ordering Information:
SiRA58DP-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
TrenchFET® Gen IV power
MOSFET
100 % Rg and UIS tested Qgd / Qgs ratio < 1 optimizes switching
characteristics
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS Synchronous rectification High power density DC/DC DC/AC inverters
G
D
S N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
IDM
Continu...
