www.vishay.com
SiSB46DN
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () MA...
www.vishay.com
SiSB46DN
Vishay Siliconix
Dual N-Channel 40 V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () MAX. 0.01171 at VGS = 10 V 0.01580 at VGS = 4.5 V
ID (A) f 34 29.4
Qg (TYP.) 6.8 nC
PowerPAK® 1212-8 Dual
D2
D2 6
D1 7
D1 8
5
3.3 mm
1 Top View
3.3 mm
1
4 G2
3 S2
2 G1
S1
Bottom View
Ordering Information: SiSB46DN-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
TrenchFET® Gen IV power
MOSFET Tuned for the lowest RDS - Qoss FOM 100 % Rg and UIS tested Qgd / Qgs ratio < 1 optimizes switching characteristics Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
Synchronous rectification DC/DC converters Motor drive switch Battery and load switch
D1 D2
G1 G2
S1 N-Channel
MOSFET
S2 N-Channel
MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source
Voltage
Gate-Source
Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) c, d
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
LIMIT
40 +20 / -16
34 27.3 11.4 a, b 9.2 a, b 70 19 2.2 a, b 11
6 23 14.8 2.6 a, b 1.7 a, b...
