SiSH407DN

www.vishay.com SiSH407DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET PowerPAK® 1212-8SH D 5 D 6 D 7 D 8 0.9 mm 3.3 mm 1 3.3 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View -20 0.0095 0.0138 0.0195 38 -25 f, g Single FEATURES TrenchFET® power MOSFET Low thermal resistance PowerPAK® package with small size and low 0.9 mm profile 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load switch Battery switch S G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8 SiSH407DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) a Pulsed drain current Continuous source-drain diode current Avalanche current Single pulse avalanche energy Maximum power dissipation Operating junction and storage temperature range Soldering recommendations (peak temperature) b, c TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 70 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT -20 ±8 -25 f -25 f -15.4 a, b -12.3 a, b -40 -25 f -3 a, b -20 20 33 21 3.6 a, b 2.3 a, b -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RA...