SiSS12DN

www.vishay.com SiSS12DN Vishay Siliconix N-Channel 40 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View 40 0.00198 0.00274 28.7 60 a, g Single FEATURES TrenchFET® Gen IV power MOSFET Very low RDS(on) in a compact and thermally enhanced package Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D Synchronous rectification Synchronous buck converter High power density DC/DC OR-ing G Load switching N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiSS12DN-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 40 +20 / -16 60...