SiSS27DN

P-Channel 30 V (D-S) MOSFET SiSS27DN Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0056 at VGS = - 10 V - 30 0.0070 at VGS = - 6 V 0.0090 at VGS = - 4.5 V ID (A) - 50e - 50e - 50e Qg (Typ.) 45 nC PowerPAK 1212-8S 3.3 mm 3.3 mm S 1 S 2 S 3 G 4 0.75 mm FEATURES TrenchFET® Power MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm Profile 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Notebook Computers and Mobile Computing - Adaptor Switch - Load Switch - DC/DC Converter - Power Management G S D 8 D 7 D 6 D 5 Bottom View Ordering Information: SiSS27DN-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 100 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single-Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature)c, d Limit - 30 ± 20 - 50e - 50e - 23a, b - 18.5a, b - 200 - 47.5 - 4a, b - 25 31 57 36 4.8a, b 3a, b - 50 to 150 260 Unit V A mJ W ...