SiZ710DT

SiZ710DT Vishay Siliconix N-Channel 20 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 RDS(on) () 0.0068 at VGS = 10 V 0.0090 at VGS = 4.5 V 0.0033 at VGS = 10 V 0.0043 at VGS = 4.5 V ID (A) 16a 16a 35a 35a Qg (Typ.) 6.9 nC Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC Channel-2 20 18.2 nC APPLICATIONS Notebook System Power POL Synchronous Buck Converter D1 PowerPAIR® 6 x 3.7 Pin 1 1 2 D1 G2 6 S2 5 S1/D2 (Pin 7) S2 4 3 G1 D1 D1 3.73 mm G1 N-Channel 1 MOSFET S1/D2 6 mm G2 N-Channel 2 MOSFET Ordering Information: SiZ710DT-T1-GE3 (Lead (Pb)-free and Halogen-free) S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Channel-1 20 ± 20 16 16a 16a, b, c 15b, c 70 16a 3.2b, c 20 20 27 17 3.9b, c 2.5b, c - 55 to 150 260 a Channel-2 Unit V Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy 35 35a 30b, c 24b, c 100 35a 3.8b, c 30 45 48 31 4.6b, c 3b, c a A mJ Maximum Power Dissipation W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e °C THERMAL RESISTANCE RATINGS...