www.vishay.com
SiZF916DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
• TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated
Schottky
• 100 % Rg and UIS tested • Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration
CHANNEL-1 CHANNEL-2
30 30
0.00400
0.00125
0.00670
0.00175
7.
Dual N-Channel MOSFET
www.vishay.com
SiZF916DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
• TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated
Schottky
• 100 % Rg and UIS tested • Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
PRODUCT SUMMARY
VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration
CHANNEL-1 CHANNEL-2
30 30
0.00400
0.00125
0.00670
0.00175
7 29.3
40 60
Dual
APPLICATIONS • CPU core power
N-Channel 1 MOSFET
• Computer / server peripherals GHS/G1
• POL
G1Return/S1
• Synchronous buck converter
• Telecom DC/DC
GLS/G2
N-Channel 2 MOSFET
VIN/D1
VSW/S1-D2
Schottky Diode GND/S2
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
PowerPAIR 6 x 5F SiZF916DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1
CHANNEL-2
Drain-source voltage
Gate-s.