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SiZF916DT Datasheet

Part Number SiZF916DT
Manufacturers Vishay
Logo Vishay
Description Dual N-Channel MOSFET
Datasheet SiZF916DT DatasheetSiZF916DT Datasheet (PDF)

www.vishay.com SiZF916DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 30 0.00400 0.00125 0.00670 0.00175 7.

  SiZF916DT   SiZF916DT






Dual N-Channel MOSFET

www.vishay.com SiZF916DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES • TrenchFET® Gen IV power MOSFET • SkyFET® low-side MOSFET with integrated Schottky • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 30 0.00400 0.00125 0.00670 0.00175 7 29.3 40 60 Dual APPLICATIONS • CPU core power N-Channel 1 MOSFET • Computer / server peripherals GHS/G1 • POL G1Return/S1 • Synchronous buck converter • Telecom DC/DC GLS/G2 N-Channel 2 MOSFET VIN/D1 VSW/S1-D2 Schottky Diode GND/S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5F SiZF916DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 Drain-source voltage Gate-s.


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