SiZF918DT

www.vishay.com SiZF918DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET With Schottky Diode PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL-2 30 30 0.0040 0.0019 0.0067 0.0027 7 17.3 40 60 Dual FEATURES TrenchFET® Gen IV power MOSFET SkyFET® low side MOSFET with integrated Schottky 100 % Rg and UIS tested Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS CPU core power N-Channel 1 MOSFET Computer / server peripherals GHS/G1 POL Synchronous buck converter G1Return/S1 Telecom DC/DC VIN/D1 VSW/S1-D2 GLS/G2 Schottky Diode N-Channel 2 MOSFET GND/S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5F SiZF918DT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 30 +20, -16 40 a 40 a 23 b, c 18.4 b, c 130 22 2...