Thyristor. T1503N Datasheet

T1503N Datasheet PDF


Part T1503N
Description Phase Control Thyristor
Feature Netz-Thyristor Phase Control Thyristor Technische Information / technical information T1503N Key P.
Manufacture Infineon
Datasheet
Download T1503N Datasheet


( DataSheet : www.DataSheet4U.com ) Technische Information T1503N Datasheet
Netz-Thyristor Phase Control Thyristor Technische Informati T1503N Datasheet
( DataSheet : www.DataSheet4U.com ) Technische Information T1503NH Datasheet




T1503N
Netz-Thyristor
Phase Control Thyristor
Technische Information /
technical information
T1503N
Key Peanranmdaetteenrs
VBO / VRRM
ITAVM
ITSM
vT0
rT
RthJC
Clamping Force
Max. Diameter
Contact Diameter
Height
7500V / 8000V
1770A (TC=85°C)
35577000A0A(TC=55°C)
1,24V
0,44mΩ
6,0K/kW
63 … 91kN
151,5mm
100mm
40mm
For type designation please refer to actual shortform
catalog
http://www.ifbip.com/catalog
Merkmale
Features
Direkt lichtgezündeter Thyristor mit integrierter
Schutzfunktion
Volle Sperrfähigkeit 50/60Hz über einen weiten
Temperaturbereich
Hohe DC Sperrstabilität
Hoher Gehäusebruchstrom
Hohe Einschalt di/dt Fähigkeit
Light triggered thyristor with internal Break over Diode
Full blocking 50/60Hz over a wide range temperature
range
High DC blocking stability
High case non-rupture current
High di/dt capability
Typische Anwendungen
Typical Applications
Hochspannungs-Gleichstrom- Übertragung HGÜ High Voltage Direct Current Transmission HVDC
Statische Kompensation SVC
Static Var Compensation SVC
Gleichrichter für Antriebsapplikationen
Rectifier for Drives Applications
Lastgeführte Umrichter
Load Commutating Inverter
Kurzschließer-Applikationen
Crowbar Applications
content of customer DMX code
DMX code
DMX code
serial number
digit
digit quantity
1..7
7
1
SP material number
8..16
9
datecode (production day)
17..18
2
datecode (production year)
19..20
2
datecode (production month)
21..22
2
vT class
23..26
4
QR class
27..30
4
Date of Publication: 2011-05-02
Revision: 8.0
4.1
2
www.ifbip.com
support@infineon-bip.com
Seite / page:11/9/ 10



T1503N
Technische Information /
technical information
Netz-Thyristor
Phase Control Thyristor
T1503N
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Elektrische Eigenschaften Periodische Rückwärts-Spitzensperrspannung
repetitive peak and reverse voltage
Tvj = -40°C... Tvj max
VRRM
Durchlaßstrom-Effektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
TC = 85 °C
ITRMSM
TC = 85 °C
TC = 70 °C
TC = 55 °C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
DIN IEC 60747-6
f = 50 Hz, PLM = 40mW, trise = 0,5µs
Tvj = Tvj max, vD = 0,67 VDRM
5.Kennbuchstabe / 5th letter H
ITAVM
ITSM
I²t
(diT/dt)cr
(dvD/dt)cr
7500 V
8000 V
2770 A
1770 A
2190 A
2560 A
60000 A
58000 A
18000 10³ A²s
16820 10³ A²s
300 A/µs
2000 V/µs
Charakteristische Werte / characteristic values
Schutzzündspannung (statisch)
protective break over voltage
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
400A iF 5000A
v T A B iT C Ln ( iT 1) D iT
minimale Zündlichtleistung
minimum gate trigger light power
Haltestrom
holding current
Einraststrom
latching current
Rückwärts-Sperrstrom
reverse blocking current
Zündverzug
gate controlled delay time
Tvj = 25°C … Tvj max
VBO
Typischer Degradationsfaktor ist 0,16%/K
für Tvj = 0°C..25°C
Typical de-rating factor of 0,16%/K is
applicable for Tvj = 0°C..25°C
Tvj = Tvj max , iT = 4000A, vD = 150V vT
Tvj = Tvj max
V(TO)
Tvj = Tvj max
rT
Tvj = Tvj max
typ.
max.
Tvj = 25°C, vD = 150V
PLM
Tvj = 25°C
IH
Tvj = 25°C, vD = 150V,
IL
PLM = 40mW, trise = 0,5µs
Tvj = Tvj max
iR
vR = VRRM
DIN IEC 60747-6
tgd
Tvj = 25 °C, vD = 1000V ,
PLM = 40mW, trise = 0,5µs
min. 7500 V
typ. 2,8 V
max. 3,0 V
typ. 1,20 V
max. 1,24 V
typ. 0,4 mΩ
max. 0,44 mΩ
A 0,616
B 0,000219
C 0,0342
D 0,0161
A -0,0864
B 0,000343
C 0,2021
D 0,000614
max. 40 mW
max. 100 mA
max.
1A
max. 600 mA
max.
5 µs
prepared by: TM
approved by: JP
Date of Publication: 2011-05-02
date of publication: 2011-05-02
revision:
8.0
Revision: 8.0
Seite / page:22/9/ 10






@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)