MOSFETs. T2N7002BK Datasheet

T2N7002BK Datasheet PDF

Part T2N7002BK
Description Silicon N-Channel MOSFETs
Feature MOSFETs Silicon N-Channel MOS T2N7002BK 1. Applications • High-Speed Switching 2. Features (1) ESD(H.
Manufacture Toshiba
Datasheet
Download T2N7002BK Datasheet

MOSFETs Silicon N-Channel MOS T2N7002BK 1. Applications • Hi T2N7002BK Datasheet




T2N7002BK
MOSFETs Silicon N-Channel MOS
T2N7002BK
1. Applications
• High-Speed Switching
2. Features
(1) ESD(HBM) level 2 kV
(2) Low drain-source on-resistance
: RDS(ON) = 1.05 (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 (typ.) (@VGS = 4.5 V)
3. Packaging and Internal Circuit
SOT23
T2N7002BK
1: Gate
2: Source
3: Drain
©2015-2017
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2015-05
2017-11-30
Rev.2.0



T2N7002BK
T2N7002BK
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 60 V
Gate-source voltage
VGSS
±20
Drain current (DC)
Drain current (pulsed)
(Note 1)
(Note 1), (Note 2)
ID
IDP
400
1200
mA
Power dissipation
(Note 3)
PD
320 mW
Power dissipation
(Note 4)
1000
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Repetitive rating; pulse width limited by maximum channel temperature.
pulse width 10 µs, Duty 1 %
Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR-4 glass epoxy board (Cu pad: 0.42 mm2 × 3)
Note 4: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR-4 glass epoxy board (Cu pad: 645 mm2)
Note:
Note:
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
©2015-2017
Toshiba Electronic Devices & Storage Corporation
2
2017-11-30
Rev.2.0




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