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T810-400B

STMicroelectronics

(T810-xxxB) HIGH PERFORMANCE TRIACS

® T810-xxxB T835-xxxB HIGH PERFORMANCE TRIACS FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA www.DataSheet4...


STMicroelectronics

T810-400B

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® T810-xxxB T835-xxxB HIGH PERFORMANCE TRIACS FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA www.DataSheet4U.com HIGH COMMUTATION TECHNOLOGY HIGH ITSM CAPABILITY A2 DESCRIPTION The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology. These devices are intented for AC control applications, using surface mount technology where high commutating and surge performances are required (like power tools, Solid State Relay). A2 A1 DPAK (Plastic) G ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM 2 Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I t value for fusing Critical rate of rise of on-state current IG = 50mA diG/dt = 0.1A/µs 2 Value Tc =110 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive 8 85 80 32 20 100 - 40 to + 150 - 40 to + 125 260 Unit A A A2s A/µs I t dI/dt Tstg Tj T Storage temperature range Operating junction temperature range Maximum temperature for soldering during 10 s °C °C °C Symbol Parameter T810-/T835400B 600B 600 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 V May 1998 Ed : 1A 1/5 T810-xxxB / T835-xxxB THERMAL RESISTANCES Symbol Rth (j-c) Rth (j-c) Rth (j-a) Junction to case for DC Junction to case for AC 360° conduction angle ( F= 50 Hz) Junction to ambient (S = 0.5 cm2) Parameter Value 2.1 1.6 70 Unit °C/W °C/W °C/W GATE CHARACTERISTICS (maximum values) www.DataSheet4U.com PG(AV) =...




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