T810-xxxB ® T835-xxxB
FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA www.DataSheet4UH.coIGmH COMMUTATION TEC...
T810-xxxB ® T835-xxxB
FEATURES ITRMS = 8 A SENSITIVE GATE : IGT ≤ 10mA and 35mA www.DataSheet4UH.coIGmH COMMUTATION TECHNOLOGY
HIGH ITSM CAPABILITY
HIGH PERFORMANCE TRIACS
A2
DESCRIPTION
The T810-xxxB and T835-xxxB series are using high performance TOPGLASS PNPN technology. These devices are intented for AC control applications, using surface mount technology where high commutating and surge performances are required (like power tools, Solid State Relay).
A2 G
A1
DPAK (Plastic)
ABSOLUTE MAXIMUM RATINGS
Symbol IT(RMS)
ITSM
I2t dI/dt
Tstg Tj T
Parameter
RMS on-state current (360° conduction angle)
Non repetitive surge peak on-state current ( Tj initial = 25°C )
I2t value for fusing
Critical rate of rise of on-state current IG = 50mA diG/dt = 0.1A/µs
Tc =110 °C
tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz
Non Repetitive
Storage temperature range Operating junction temperature range
Maximum temperature for soldering during 10 s
Value 8
85 80 32 20
100
- 40 to + 150 - 40 to + 125
260
Unit A
A
A2s A/µs
°C °C °C
Symbol
Parameter
VDRM VRRM
Repetitive peak off-state
voltage Tj = 125 °C
T810-/T835-
400B 400
600B 600
Unit V
May 1998 Ed : 1A
1/5
T810-xxxB / T835-xxxB
THERMAL RESISTANCES
Symbol Rth (j-c) Rth (j-c) Rth (j-a)
Parameter Junction to case for DC Junction to case for AC 360° conduction angle ( F= 50 Hz) Junction to ambient (S = 0.5 cm2)
Value 2.1 1.6 70
Unit °C/W °C/W °C/W
GATE CHARACTERISTICS (maximum values)
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PG(AV) = 1...
