T835-600H

isc Thyristors INCHANGE Semiconductor T835-600H APPLICATIONS ·With TO-251(IPAK) package. ·Be suitable for general purpose AC switching,they can be used as an ON/OFF function in applications. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM IT(RMS) ITSM PG(AV) Repetitive peak reverse voltage RMS on-state current @Tc=110℃ Surge non-repetitive on-state current F=50HZ；t=20ms F=60HZ;16.7ms Average gate power dissipation @Tj=125℃ tP=20μs Tj Operating junction temperature Tstg Storage temperature MIN 600 600 8 80 84 1 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRM=VRRM IDRM Repetitive peak off-state current VDM=VDRM Tj=25℃ Tj=125℃ Tj=25℃ Tj=125℃ VTM On-state voltage ITM= 11A；tp=380μs Gate-trigger current （ minimum IGT IGT is guaranted at 5% of IGT VD = 12 V;RL=30Ω max）Quadrant(I - II - III) VGT Gate-trigger voltage Quadrant (I - II - III) VD = 12 V;RL=30Ω Rth(j-c) Thermal resistance Junction to case Rth(j-a) Thermal resistance Junction to case MIN MAX UNIT 5 μA 1 mA 5 μA 1 mA 1.55 V 35 mA 1.3 V 1.6 ℃/W 100 ℃/W isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Thyristors INCHANGE Semiconductor T835-600H NOTICE： ISC reserves the rights to make changes of the content herein the...