TA1282N

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES ᴌComplementary to KTC3210. KTA1282 EPITAXIAL PLANAR PNP TRANSISTOR B C A MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -30 -30 -5 -2 2 625 150 -55ᴕ150 UNIT V V V A A mW ᴱ ᴱ L M C K E G D H F F 1 23 J N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE Classification 0:100ᴕ200, Y:160ᴕ320 TEST CONDITION VCB=-30V, IE=0 VEB=-5V, IC=0 IC=-10mA, IB=0 IC=-1mA, IC=0 VCE=-2V, IC=-500mA IC=-1.5A, IB=-0.03A VCE=-2V, IC=-500mA VCE=-2V, IC=-500mA VCB=-10V, IE=0, f=1MHz MIN. -30 -5 100 - TYP. - 120 48 MAX. -100 -100 320 -2.0 -1.0 - UNIT nA nA V V V V MHz pF 1999. 9. 10 Revision No : 0 1/2 COLLECTOR CURRENT IC (mA) KTA1282 I C - VCE -1600 -1400 -1200 -1000 -10 -8 -6...