LITE-ON SEMICONDUCTOR
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass Passivated Junction Bidirecti...
LITE-ON SEMICONDUCTOR
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
FEATURES
Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 50A @ 10/1000us or 150A @ 8/20us High off state Impedance and low on state
voltage Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.002 ounces, 0.064 grams
TA0640L thru TA4000L
Bi-Directional VDRM - 58 to 360 Volts IPP - 50 Amperes
SMA
SMA
A DIM. MIN. MAX. A 4.06 4.57
B C B 2.29 2.92 C 1.27 1.63
D 0.15 0.31
E 4.83 5.59
G F 0.05 0.20
H FD E
G 2.01 2.62 H 0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range
THERMAL RESISTANCE
SYMBOL
IPP ITSM
TJ TSTG
CHARACTERISTICS Junction to leads Junction to ambient on print circuit (on re...