TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4002F
VHF~UHF Wide Band Amplifier
Features
z Band width: ...
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4002F
VHF~UHF Wide Band Amplifier
Features
z Band width: 1.3 GHz (typ.) (3dB down) z High gain: |S21|2 = 23dB (typ.) (f = 500 MHz) z 50 Ω Input and output impedance z Small package
Pin Assignment (top view) Marking
TA4002F
Weight: 0.013 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply
voltage Total power dissipation Operating temperature Storage temperature
VCC PD (Note 1)
Topr Tstg
6 300 −40~85 −55~125
V mW °C °C
Note: Note 1:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
When mounted glass epoxy of 2.5 cm2 × 1.6 t
1 2007-11-01
TA4002F
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Circuit
Test Condition
Min Typ. Max Unit
Circuit current Insertion gain
ICC |S21|2
― VCC = 5 V, non carrier 1 VCC = 5 V, f = 500 MHz
10 14 20 mA 20 23 26 dB
Band width
BW 1 VCC = 5 V
(Note ...