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TA4012AFE

Toshiba Semiconductor

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications F...


Toshiba Semiconductor

TA4012AFE

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TA4012AFE TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012AFE UHF Wide Band Amplifier Applications Features · · · Low current: ICC = 6.5 mA Wide band: f = 2.0 GHz (3dB down) Operating supply voltage: VCC = 1.5~2.2 V Maximum Ratings (Ta = 25°C) Characteristics Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature Storage temperature (Note1) (Note2) Symbol VCC1 VCC2 PD Topr Tstg Rating 2.2 3 300 -40~85 -55~150 Unit V V mW °C °C Weight: 0.003 g (typ.) Note1: Note2: When VCC is operated at less than 1/4 duty cycle When mounted on the glass epoxy of 2.5 cm ´ 1.6 t 2 Marking OUT 5 COLLECTOR 4 U4 1 2 3 VCC GND IN 1 2002-01-18 TA4012AFE Electrical Characteristics (Ta = 25°C, Zg = Zl = 50 W) Characteristics Circuit current Band width Insertion gain Noise figure Isolation Input return loss Output return loss Output power at 1 dB gain compression Symbol ICC BW ïS21ï NF ïS12ï ïS11ï ïS22ï 2 2 2 2 Test Condition VCC = 2 V, non carrier VCC = 2 V VCC = 2 V, f = 1.5 GHz VCC = 2 V, f = 1.5 GHz VCC = 2 V, f = 1.5 GHz VCC = 2 V, f = 1.5 GHz VCC = 2 V, f = 1.5 GHz VCC = 2 V, f = 1.5 GHz 2 (Note3) Min 4.5 1.8 10 ¾ ¾ ¾ ¾ ¾ Typ. 6.5 2.0 12 6 -22 -6.5 -7.5 0 Max 8.5 ¾ ¾ 7.5 ¾ ¾ ¾ ¾ Unit mA GHz dB dB dB dB dB dBmW Po1dB Note3: BW is the frequency of 3dB down from ïS21ï at 1.5 GHz. Caution This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed. RF Test Circuit (t...




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