TA4012AFE
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4012AFE
UHF Wide Band Amplifier Applications F...
TA4012AFE
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
TA4012AFE
UHF Wide Band Amplifier Applications Features
· · · Low current: ICC = 6.5 mA Wide band: f = 2.0 GHz (3dB down) Operating supply
voltage: VCC = 1.5~2.2 V
Maximum Ratings (Ta = 25°C)
Characteristics Supply
voltage 1 Supply
voltage 2 Total power dissipation Operating temperature Storage temperature (Note1) (Note2) Symbol VCC1 VCC2 PD Topr Tstg Rating 2.2 3 300 -40~85 -55~150 Unit V V mW °C °C
Weight: 0.003 g (typ.)
Note1: Note2:
When VCC is operated at less than 1/4 duty cycle When mounted on the glass epoxy of 2.5 cm ´ 1.6 t
2
Marking
OUT 5 COLLECTOR 4
U4
1 2 3 VCC GND IN
1
2002-01-18
TA4012AFE
Electrical Characteristics (Ta = 25°C, Zg = Zl = 50 W)
Characteristics Circuit current Band width Insertion gain Noise figure Isolation Input return loss Output return loss Output power at 1 dB gain compression Symbol ICC BW ïS21ï NF ïS12ï ïS11ï ïS22ï
2 2 2 2
Test Condition VCC = 2 V, non carrier VCC = 2 V VCC = 2 V, f = 1.5 GHz VCC = 2 V, f = 1.5 GHz VCC = 2 V, f = 1.5 GHz VCC = 2 V, f = 1.5 GHz VCC = 2 V, f = 1.5 GHz VCC = 2 V, f = 1.5 GHz 2 (Note3)
Min 4.5 1.8 10 ¾ ¾ ¾ ¾ ¾
Typ. 6.5 2.0 12 6 -22 -6.5 -7.5 0
Max 8.5 ¾ ¾ 7.5 ¾ ¾ ¾ ¾
Unit mA GHz dB dB dB dB dB dBmW
Po1dB
Note3:
BW is the frequency of 3dB down from ïS21ï at 1.5 GHz.
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and equipment are earthed.
RF Test Circuit (t...