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TA4012FU

Toshiba Semiconductor

UHF WIDE-BAND AMPLIFIER

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications TA4012FU Fe...



TA4012FU

Toshiba Semiconductor


Octopart Stock #: O-504593

Findchips Stock #: 504593-F

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Description
TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4012FU UHF Wide Band Amplifier Applications TA4012FU Features z Low current: ICC = 6.5 mA z Wide band: f = 2.0 GHz (3dB down) z Operatin supply voltage: VCC = 1.5 to 2.2 V Pin Assignment Absolute Maximum Ratings (Ta = 25°C) Weight: 0.006 g (typ.) Characteristic Symbol Rating Unit Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature Storage temperature VCC1 2.2 V VCC2 (Note 1) 3 V PD (Note 2) 300 mW Topr −40 to 85 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: When VCC is operated at less than 1/4 duty cycle. Note 2: When mounted on the glass epoxy of 2.5 cm2 × 1.6 t Caution This device electrostatic sensitivity. Please handle with caution. Start of commercial production 1999-03 1 2014-03-01 TA4012FU Electrical Characteristics (Ta = 25°C, Zg = ZI = 50 Ω) Chara...




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