TA4019F

TA4019F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA4019F UHF Wide Band Amplifier Applications Features · · · High gain: |S21|2 = 30dB (@45 MHz) Low distortion: IM3 = 53dB (@45 MHz) Operating supply voltage: VCC = 4.75 V~5.25 V Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Total power dissipation Operating temperature Storage temperature Symbol VCC PD (Note 1) Topr Tstg 2 Rating 5.5 550 -40~85 -55~150 Unit V mW °C °C Weight: 0.02g (typ.) Note 1: When mounted on the glass epoxy 2.5cm ´ 0.4 t Pin Assignment VCC GND OUT OUT (1) (2) 8 7 6 5 4019F 1 2 3 4 IN (1)IN (2)MGC MGC (1) (2) 1 2003-03-12 TA4019F Electrical Characteristics (Ta = 25°C, VCC = 5 V, Zg = Zl = 50 W) Characteristics Circuit current Band width Input return loss Insertion gain (1) Insertion gain (2) Isolation Output return loss Noise figure 3 rd Symbol Icc BW |S11| 2 2 Test Circuit Test Condition Non carrier Min 28 Typ. 35 300 -0.3 30 10.5 -57 -2.1 8 53 Max 42 ¾ ¾ 33 13.5 ¾ ¾ 11 ¾ Unit mA MHz dB dB dB dB dB dB dB Fig2 (Note 2) f = 45MHz f = 45MHz 200 ¾ 27 7.5 ¾ ¾ ¾ 47 |S21| (1) |S21|2(2) |S12|2 |S22| NF IM3 2 2 Fig1 f = 45MHz f = 45MHz f = 45MHz Fig2 f = 45MHz f1 = 45 MHz, f2 = 44 MHz, Pin = -35dBmW order inter modulation Note 2: BW is the frequency of 3dB down from |S21| at 45 MHz. CAUTION: This device electrostatic sensitivity. Please handle with caution. 2 2003-03-12 TA4019F 1000 pF 1 1000 pF 2 IN2 GND 7 1000 pF 3 MGC (1) OUT1 6 1000 pF 4 MGC (2...