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TA4500F

Toshiba Semiconductor

1.9 GHz Band RX Front-End IC

TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cor...


Toshiba Semiconductor

TA4500F

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Description
TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features Low-noise amplifier / down-conversion mixer Integrated local buffer amplifier Single positive power supply: VCC = 3.0 V Large conversion gain: GLNA = 17.5 dB (typ.) GMIX = 5.0 dB (typ.) High input IP3: IIP3LNA = -7.5 dBmW (typ.) IIP3MIX = 7.0 dBmW (typ.) High 1/2 IF reduction ratio: 1/2IFRMIX = 45 dB (typ.) Small package: QS16 (2.5 mm × 2.5 mm × 0.55 mm) QS16 Weight: 0.0065 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Supply voltage Symbol VCC (Note 1) PIN (RF_IN) Input power PIN (LO_IN) PIN (MIX_IN) Power dissipation Pd (Note 2) Topr Tstg Rating 4.5 10 0 0 500 −40 to +85 −55 to +150 Unit V dBmW dBmW dBmW mW °C °C www.DataSheet4U.com Operating temperature range Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated...




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