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TA65N14A10 Datasheet

Part Number TA65N14A10
Manufacturers Solidtron
Logo Solidtron
Description Advanced Pulse Power Device
Datasheet TA65N14A10 DatasheetTA65N14A10 Datasheet (PDF)

SMCT TA65N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description This voltage controlled Solidtron (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. The VCS features the high peak current capability and low Onstate voltage drop common to SCR thyristors combined with extremely high dI/dt capability. This semiconductor is intended for the control of high power circuits with the use of very small amounts of input ener.

  TA65N14A10   TA65N14A10






Advanced Pulse Power Device

SMCT TA65N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM Description This voltage controlled Solidtron (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybrid. The VCS features the high peak current capability and low Onstate voltage drop common to SCR thyristors combined with extremely high dI/dt capability. This semiconductor is intended for the control of high power circuits with the use of very small amounts of input energy and is ideally suited for capacitor discharge applications. The ThinPakTM Package is a perforated, metalized ceramic substrate attached to the silicon using 302 C solder. An epoxy underfill is applied to protect the high voltage termination from debris. All exterior metal surfaces are tinned with 63pb/37sn solder providing the user with a circuit ready part. It's small size and low profile make it extremely attractive to high dI/dt applications where stray series inductance must be kept to a minimum. o Package Gate Return Bond Area Gate Bond Area Cathode Bond Area Anode Bond Area ThinPakTM Schematic Symbol Anode (A) Features l l l l 1400V Peak Off-State Voltage 65A Continuous Rating 6kA Surge Current Capability >100kA/uSec dI/dt Capability l l l l <150nSec Turn-On Delay Low On-State Voltage MOS Gated Control Low Inductance Package Gate (G) Gate Return (GR) Cathode (K) Absolute Maximum Ratings SYMBOL Peak Off-State Voltage Peak Reverse Voltage Off-State Rate of Change of Voltag.


2014-05-24 : PH9278NL    LQH32DN1R0M23K    LQH32DN1R0M23    LQH32DN1R0M23L    MTP1406J3    MTP1013C3    MTNN8453KQ8    MTNN8452KQ8    MTNN8451KQ8    MTNN20N03Q8   


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