TB3500H

LITE-ON SEMICONDUCTOR SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 MECHANICAL DATA Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.093 grams TB0640H thru TB3500H Bi-Directional VDRM - 58 to 320 Volts IPP - 100 Amperes SMB SMB DIM. MIN. MAX. A A 4.06 4.57 B 3.30 3.94 B C C 1.96 2.21 D 0.15 0.31 E 5.21 5.59 G H FD E F 0.05 0.20 G 2.01 2.62 H 0.76 1.52 All Dimensions in millimeter MAXIMUM RATINGS CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range THERMAL RESISTANCE SYMBOL IPP ITSM TJ TSTG CHARACTERISTICS Junction to leads Junction to ambient on print circuit (on recommended pad ...