LITE-ON SEMICONDUCTOR
TB0640M thru TB4000M
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
Bi-Directional
VDRM - 58 t...
LITE-ON SEMICONDUCTOR
TB0640M thru TB4000M
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
Bi-Directional
VDRM - 58 to 360 Volts IPP - 80 Amperes
FEATURES
Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 80A @10/1000us or 250A @8/20us High off state Impedance and low on state
voltage Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.003 ounces, 0.093 grams
SMB
SMB
A DIM. MIN. MAX. A 4.06 4.57
B 3.30 3.94 BC
C 1.96 2.21
D 0.15 0.31
E 5.21 5.59
G F 0.05 0.20
H FD E
G 2.01 2.62 H 0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.3ms (one half cycle) Junction temperature range storage temperature range
THERMAL RESISTANCE
SYMBOL
IPP ITSM
TJ TSTG
CHARACTERISTICS
Junction to leads Junction to ambient on print circuit (on recommended pad layout) Typical positive temperature coefficient for brekdown
voltage
SYMBOL Rth(J-L) Rth(J-A) △VBR/△TJ
MAXIMUM RATED SURGE WAVEFORM
IPP, PEAK PULSE CURRENT (%)
WAVEFORM
2/10 us 8/20 us 10/160 us 10/560 us 10/700 us 10/1000 us
STANDARD
GR-1089-CORE IEC 61000-4-5 FCC Part 68 FCC Part 68 ITU-T K20/K21 GR-1089-CORE
IPP (A)
250 250 150 100 90 80
100
50
0 tr
VALUE 80 40
-40 to +150 -55 to +150
VALUE 20 100 0.1
UNIT A A ℃ ℃
UNIT ℃/W ℃/W %/℃
Peak value (Ipp) tr= rise time to pea...