TC518512FL-70LT

rOSHIBA TC518512PL/FL/FIL/TRL-70(Ln/80(Ln /10(Ln SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .b!gh speed and low power storage. The TC518512PL operates from a single 5V power supply. Refreshing is supported by a refresh (OEIRFSH) input which enables two types of refreshing - auto refresh and self refresh. The TC518512PL features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL-(LT) is guaranteed over an operating temperature range of -20 - 7LfC. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastiC flat package, and a thin small outline package (forward type, reve...