ROM. TC534000P Datasheet

TC534000P Datasheet PDF


TC534000P
TOSHIBA MOS MEMORY PRODUCT
4M BIT (512K WORD X 8 Bin CMOS MASK ROM
SILICON GATE CMOS
TC534000P
OESCR! PTI ON
The TC534000P is a 4,194,304 bits read only memory organized as 524,288 words by
8 bits with a low bit cost, thus being suitable for use in program memory of micro-
processor, and data memory, especially character generator. The TC534000P using CHOS
technology is most suitable for low power applications where battery operations are
required.
The TC534000P has one programmable chip enable input CE/CE for device selection.
The TC534000P is moulded in a 32 pin standard plastic package, 0.6 inch in width.
FEATURES
• Single 5V Power Supply
• Access Time: 250ns (Max.)
• Power Dissipation
Operating Current: 30mA (Hax.)
Standby Current 20~A (Max.)
• All Inputs and Outputs: TTL Compatible
• Three State Outputs
• 32 pin 600 mil width Plastic DIP
• Fully Static Operation
• Programmable Chip Enable
PI~ CONNECTION
A16
A15
;'.12
A7
A6
A5
At"
AS
A2
Al
AO
DO
Dl
D2
aND
VDD
A1S
A17
;,14
A13
A8
A9
All
DE
AID
r.E/C~
D7
D6
D5
D4
D3
PIN NPJ,1ES
AO '\, Al8
DO '\, D7
OE
CE/CE
VDD
GND
N.C.
Address Inputs
Data Outputs
Output Enable Input
Chip Enable Input
PO\ver Supply
Ground
No Connection
BLOCK DIAGRAt1
DO Dl D2 D3 Dt" D5 Do D7
CE;
or:;
AO
Al
A2
;,3
A4
A5
en
p::
A6
C::J
r.-
A'; r.-
::>
A8 III t~
A9
A10
en
en
::::
:::J
::::.
All
A12
A13
C::J
p::
A
A
c:::
0
c
c::::
::::.
A14
~
0
AIS
AI6
A17
A IF.:
MEMORY CELLS
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Part TC534000P
Description 4M BIT CMOS MASK ROM
Feature TC534000P; TOSHIBA MOS MEMORY PRODUCT 4M BIT (512K WORD X 8 Bin CMOS MASK ROM SILICON GATE CMOS TC534000P OE.
Manufacture Toshiba
Datasheet
Download TC534000P Datasheet


TOSHIBA MOS MEMORY PRODUCT 4M BIT (512K WORD X 8 Bin CMOS M TC534000P Datasheet





TC534000P
TC534000P
MAX H1UM RATINGS
SYMBOL
ITEM
VDD Power Supply Voltage
VIN Input Voltage
VOUT
Output Voltage
PD Power Dissipation
TSTG
Storage Temperature
TOPR
Operating Temperature
TSOLDER Soldering Temperature· Time
RATING
-0.5'V7.0
-0.5 'VVDD
O'VVDD
1.0
-55 'V 150
-40 'V 85
260 • 10
UNIT
V
V
V
W
°c
°c
°C·sec
D.C. OPERATING CONDITIONS (Ta=-40 'V 85°C)
SYNBOL
PAlW·IETER
MIN.
VDD Power Supply Voltage 4.5
VIH Input High Voltage
2.2
VIL Input Low Voltage
-0.3
TYP.
5.0
-
-
HAX.
5.5
VDD+O·3
0.8
UNIT
V
D.C. and OPERATING CHARACTERISTICS
snlBOL
PARAl'1ETER
IlL Input Leakage Current
ILO Output Leakage Current
10H Output High Current
IOL
IDDSI
SOtu-atnpdu-bt yLOC\vu rCr eunrtr e n t
lDDS2 Standby Current
IDDOI
IDD02
Operating Current
(Ta=-40'V85°C, VDD=5V±10%)
CONDITIONS
VIN=O 'V VDD
CE=VIH, VOUT=OV 'V VDD
VOH=2.4V
VOL=0.4V
CE=VIH
CE=VDD and VIN=OV(VDD)
VIN=VIH/VIL, t cyc l e=250ns
Vn~=VDD/OV , tcyc1e=250ns
HIN.
-
-
-1.0
2.0
-
-
-
-
HAX.
±1.0
±5.0
-
-
2
20
40
30
UNIT
lJA
lJA
rnA
rnA
rnA
lJA
rnA
CAPACITANCE
SYHBOL
PARAHETER
CIN Input Capacitance
COUT Output Capacitance
CONDITIONS
f=lM1-lz, Ta=25°C
f=Ulliz, Ta=25°C
HIN. HAX.
-8
- 10
Note: This parameter is period{cally sampled and is not 100% tested.
UNIT
pF
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TC534000P
TC534000P
A.C. CHARACTERISTICS (Ta=-40 '" S5°C, VDD=5V±10%)
SYMBOL
PARAMETER
MIN.
tCYC
tACC
tCE
tOE
Cycle Time
Access Time
Chip Enable Access Time
Output Enable Access Time
250
-
-
-
tCED
tOED
tOH
Output Disable Time
Output Disable Time from OE
Output Hold Time
0
-
20
MAX.
-
250
250
100
SO
SO
-
UNIT
ns
AC TEST CONDITIONS
Output Load
Input Levels
Timing Measurement Reference Levels
Input Rise and Fall Time
Input
Output:
100pF + lTTL
0.6V, 2.4V
O.SV, 2.2V
0.8V, 2.0V
5ns
TIMiNG \~AVEFORMS
AD-AlB
tCYC
Valid
}
CE/CE
tACC
X'
tCE
1 cEI
c:--:: i
II
~DI
~
OPERATI ON 1'10DE
NODE
Read
Standby
Output Deselect
CE(CE)
L(H)
H(L)
L(H)
OE AO '" 18 Outputs PO\ver
L
Valid
Data Out Operating
* -:,,\
High-Z
Standby
H
.0.
High-Z
Operating
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