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TC55257BTRL-10LV Datasheet

Part Number TC55257BTRL-10LV
Manufacturers Toshiba
Logo Toshiba
Description SILICON GATE CMOS STATIC RAM
Datasheet TC55257BTRL-10LV DatasheetTC55257BTRL-10LV Datasheet (PDF)

TOSHIBA TC55257BPL/BFL/BSPL/BFIL/BTRL85L/IOL(LV) SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the s.

  TC55257BTRL-10LV   TC55257BTRL-10LV






Part Number TC55257BTRL-10LT
Manufacturers Toshiba
Logo Toshiba
Description SILICON GATE CMOS STATIC RAM
Datasheet TC55257BTRL-10LV DatasheetTC55257BTRL-10LT Datasheet (PDF)

TOSHIBA SILICON GATE CMOS TC55257BPL/BFL/BSPL/BFIL/BTRL-85/10(Ln 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz (typ.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the s.

  TC55257BTRL-10LV   TC55257BTRL-10LV







Part Number TC55257BTRL-10L
Manufacturers Toshiba
Logo Toshiba
Description SILICON GATE CMOS STATIC RAM
Datasheet TC55257BTRL-10LV DatasheetTC55257BTRL-10L Datasheet (PDF)

TOSHIBA TC55257BPL/BFL/BSPL/BFlL/BTRL-85L/IOL SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz illP.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the sta.

  TC55257BTRL-10LV   TC55257BTRL-10LV







SILICON GATE CMOS STATIC RAM

TOSHIBA TC55257BPL/BFL/BSPL/BFIL/BTRL85L/IOL(LV) SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2J,lA at room tem- perature. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC55257BPL is suitable for use in microprocessor systems where high speed, low power, and battery backup are required. The TC55257BPL is offered in a standard dual-in-line 28-pin plastic package (0.6/0.3 inch width), a small outline plastic package, and a thin small outline.


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