32,768 WORD X 8 BIT CMOS STATIC RAM SILICON GATE CMOS
TC55257 PL-S5, TC55257 P-l O/PL-l 0 TC55257 P-12/PL-12
IDESCRIPT...
32,768 WORD X 8 BIT
CMOS STATIC RAM SILICON GATE
CMOS
TC55257 PL-S5, TC55257 P-l O/PL-l 0 TC55257 P-12/PL-12
IDESCRIPTION I
The TCSS257P is 262,144 bit static random access memory organized as 32,768 words by 8 bits using
CMOS technology, and operated from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a operating current of 5mA/MHz(Typ.) and minimum cycle time of 85ns.
lfuen CE is a logical high, the device is placed in low power standby mode in which standby current is 2~A typically. The TCSS257P has two control inputs. Chip enable (CE) allow for device selection and data retention control, and an output enable input (OE) provides fast memory access. Thus the TCSS2S7P is suitable for use in various microprocessor application systems where high speed, low power, and battery back up are required.
The TCSS257P is offered in a dual-in-line 28 pin standard plastic package.
i FEATURES I
Low Power Dissipation 27 .St:Jtl/:lliz(~!a:<...