TC55B329P

TOSHIBA 1l:55B329P/]-10/12 SILICON GATE BiCMOS 32,768 WORD x 9 BIT BiCMOS STATIC RAM Description The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation. The TC55B329P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TTL compatible. The TC55B329P/J is available in a 300mil width, 32-pin DIP and SOJ suitable for high density surface assembly. Features Fast access time - TC55B329P/J-10 10ns (max.) - TC55B329P/J-12 12ns (max.) Low power dissipation - Operation: - TC55B329P/J-10 170mA (max.) - TC55B329P/J-12 170mA (max.) - Standby: 15mA (max.) Single 5V...