TOSHIBA
1l:55~65P/J-I0/12
SILICON GATE BiCMOS
65,536 WORD x 4 BIT BiCMOS STATIC RAM
Description
The TC55B465P/J is a...
TOSHIBA
1l:55~65P/J-I0/12
SILICON GATE Bi
CMOS
65,536 WORD x 4 BIT Bi
CMOS STATIC RAM
Description
The TC55B465P/J is a 262,144 bit high speed Bi
CMOS static random access memory organized as 65,536 words by 4 bits and operated from a single 5V supply. Toshiba's Bi
CMOS technology and advanced circuit design enable high speed operation.
The TC55B465P/J features low power dissipation when the device is deselected using chip enable (CE) and has an output enable input (OE) for fast memory access.
The TC55B465P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible.
The TC55B465P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.
Features
Pin Connection (Top View)
Fast access time
- TC55B465P/J-10 10ns (max.) - TC55B465P/J-12 12ns (max.) Low power dissipation
- Operation:
- TC55B465P/J-10 140mA (max.)
- TC55B465P/J-12 140mA (max.)
- Standby:
15mA (m...