DatasheetsPDF.com

TC55V328J-35 Datasheet

Part Number TC55V328J-35
Manufacturers Toshiba
Logo Toshiba
Description 8-Bit CMOS SRAM
Datasheet TC55V328J-35 DatasheetTC55V328J-35 Datasheet (PDF)

TOSHIBA SILICON GATE CMOS 1l:55V328}20/25/35 PRELIMINARY 32,768 WORD x 8 BIT CMOS STATIC RAM Description The TC55V328J is a 262,144 bit CMOS high speed static random access memory organized as 32,768 words by 8 bits and designed to operate from a single 3.3V supply. Toshiba's advanced CMOS technology and circuit design enable high speed, low voltage operation. The TC55V328J features low power dissipation when the SRAM is deselected using chip enable (CE) and has an output enable input (OE) .

  TC55V328J-35   TC55V328J-35






8-Bit CMOS SRAM

TOSHIBA SILICON GATE CMOS 1l:55V328}20/25/35 PRELIMINARY 32,768 WORD x 8 BIT CMOS STATIC RAM Description The TC55V328J is a 262,144 bit CMOS high speed static random access memory organized as 32,768 words by 8 bits and designed to operate from a single 3.3V supply. Toshiba's advanced CMOS technology and circuit design enable high speed, low voltage operation. The TC55V328J features low power dissipation when the SRAM is deselected using chip enable (CE) and has an output enable input (OE) for fast memory access. It is suitable for use in high speed applications such as cache memory. All inputs and outputs are LVTTL (low voltage TIL) compatible. The TC55V328J is available in a 28-pin, 300mil SOJ package suitable for high density assembly. Features Pin Connection (Top View) • Fast access time - TC55V328J-20 - TC55V328J-25 - TC55V328J-35 • Low power dissipation 20ns (max.) 25ns (max.) 35ns (max.) - Operation: - TC55V328J-20 70mA (max.) - TC55V328J-25 70mA (max.) - TC55V.


2017-02-17 : TC551632J-20    TC55B329J-12    TC55B329J-10    TC55B329P-12    TC55329AJ-35    TC55B329P-10    TC55329AJ-25    TC55329AJ-20    TC55329AJ-15    TC55329AP-25   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)