E2PROM. TC58BVG2S0HBAI6 Datasheet

TC58BVG2S0HBAI6 Datasheet PDF


TC58BVG2S0HBAI6
TC58BVG2S0HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58BVG2S0HBAI6 is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and
Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the
register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block
unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TC58BVG2S0HBAI6 is a serial-type memory device which utilizes the I/O pins for both address and data
input/output as well as for command inputs. The Erase and Program operations are automatically executed making
the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still
cameras and other systems which require high-density non-volatile memory data storage.
The TC58BVG2S0HBAI6 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected
internally.
FEATURES
Organization
Memory cell array
Register
Page size
Block size
x8
4224 × 128K × 8
4224 × 8
4224 bytes
(256K + 8K) bytes
Modes
Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read
Mode control
Serial input/output
Command control
Number of valid blocks
Min 2008 blocks
Max 2048 blocks
Power supply
VCC = 2.7V to 3.6V
Access time
Cell array to register 55 µs typ. (Single Page Read) / 90µs typ. (Multi Page Read)
Serial Read Cycle
25 ns min (CL=50pF)
Program/Erase time
Auto Page Program
Auto Block Erase
340 µs/page typ.
2.5 ms/block typ.
Operating current
Read (25 ns cycle)
Program (avg.)
Erase (avg.)
Standby
30 mA max.
30 mA max
30 mA max
50 µA max
Package
P-VFBGA67-0608-0.80-001 (Weight: 0.095 g typ.)
8bit ECC for each 528Byte is implemented on the chip.
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Part TC58BVG2S0HBAI6
Description 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM
Feature TC58BVG2S0HBAI6; TC58BVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS.
Manufacture Toshiba
Datasheet
Download TC58BVG2S0HBAI6 Datasheet


TC58BVG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILI TC58BVG2S0HBAI6 Datasheet





TC58BVG2S0HBAI6
PIN ASSIGNMENT (TOP VIEW)
12345678
A NC NC
NC NC NC
B NC WP ALE VSS CE WE RY/BY NC
C NC NC RE CLE NC NC NC NC
D NC NC NC NC NC NC
E NC NC NC NC NC NC
F NC NC NC NC NC NC
G NC I/O1 NC NC NC VCC
H NC NC I/O2 NC VCC I/O6 I/O8 NC
J NC VSS I/O3 I/O4 I/O5 I/O7 VSS NC
K NC NC NC
NC NC NC
PIN NAMES
I/O1 to I/O8
CE
WE
RE
CLE
ALE
WP
RY/BY
VCC
VSS
NC
I/O port
Chip enable
Write enable
Read enable
Command latch enable
Address latch enable
Write protect
Ready/Busy
Power supply
Ground
No Connection
TC58BVG2S0HBAI6
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TC58BVG2S0HBAI6
BLOCK DIAGRAM
Data register 1
I/O1
to
I/O8
CE
CLE
ALE
WE
RE
WP
RY/BY
I/O
Control circuit
Logic control
RY / BY
ECC Logic
Status register
Address register
Command register
Control circuit
TC58BVG2S0HBAI6
VCC VSS
Column buffer
Column decoder
Data register 0
Sense amp
Memory cell array
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC Power Supply Voltage
VIN Input Voltage
VI/O
PD
TSOLDER
TSTG
TOPR
Input /Output Voltage
Power Dissipation
Soldering Temperature (10 s)
Storage Temperature
Operating Temperature
VALUE
0.6 to 4.6
0.6 to 4.6
0.6 to VCC + 0.3 (4.6 V)
0.3
260
55 to 125
-40 to 85
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN = 0 V
COUT
Output
VOUT = 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN
MAX
10
10
UNIT
V
V
V
W
°C
°C
°C
UNIT
pF
pF
3 2013-07-05C






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