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TC58NVG0S3HBAI6

Toshiba

1G-BIT (128M x 8 BIT) CMOS NAND E2PROM


Description
TC58NVG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1G BIT (128M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG0S3HBAI6is a single 3.3V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks. The device has a 2176-byte static registe...



Toshiba

TC58NVG0S3HBAI6

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